BAND-EDGE ALIGNMENT IN HETEROSTRUCTURES

被引：27

作者：

SCHUERMEYER, FL

COOK, P

MARTINEZ, E

TANTILLO, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1877 / 1878

页数：2

共 16 条

[1] CHANG LL, 1986, HETEROJUNCTIONS SEMI, P152
[2] QUANTUM-WELL PARA-CHANNEL ALGAAS/INGAAS/GAAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS WITH VERY HIGH TRANSCONDUCTANCE
DANIELS, RR
RUDEN, PP
SHUR, M
GRIDER, D
NOHAVA, TE
ARCH, DK
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) : 355 - 357
[3] FEUER MD, 1989, 47TH IEEE ANN DEV RE
[4] VALENCE-BAND DISCONTINUITIES IN (100) GASB/ALSB AND GASB/INAS HETEROJUNCTIONS
GUALTIERI, GJ
NUZZO, RG
MALIK, RJ
WALKER, JF
FELDMAN, LC
SUNDER, WA
SCHWARTZ, GP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1284 - 1285
[5] X-RAY PHOTOEMISSION CORE LEVEL DETERMINATION OF THE GASB/ALSB HETEROJUNCTION VALENCE-BAND DISCONTINUITY
GUALTIERI, GJ
SCHWARTZ, GP
NUZZO, RG
SUNDER, WA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (16) : 1037 - 1039
[6] SIMPLE ANALYTIC MODEL FOR HETEROJUNCTION BAND OFFSETS
JAROS, M
[J]. PHYSICAL REVIEW B, 1988, 37 (12): : 7112 - 7114
[7] KINK EFFECT IN SUBMICROMETER-GATE MBE-GROWN INALAS/INGAAS/INALAS HETEROJUNCTION MESFETS
KUANG, JB
TASKER, PJ
WANG, GW
CHEN, YK
EASTMAN, LF
AINA, OA
HIER, H
FATHIMULLA, A
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 630 - 632
[8] MIALHIOT C, 1987, J VAC SCI TECHNOL B, V5, P1268
[9] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH
MISHRA, UK
BROWN, AS
ROSENBAUM, SE
HOOPER, CE
PIERCE, MW
DELANEY, MJ
VAUGHN, S
WHITE, K
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 647 - 649
[10] A NONDESTRUCTIVE SYNCHROTRON RADIATION PHOTOEMISSION-STUDY OF THE BAND LINEUP FOR BURIED GASB-ALSB INTERFACES
NILES, DW
LAI, B
MCKINLEY, JT
MARGARITONDO, G
WELLS, G
CERRINA, F
GUALTIERI, GJ
SCHWARTZ, GP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1286 - 1287

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