A top-down look at bottom-up electronics

被引:13
作者
Lundstrom, M [1 ]
机构
[1] Purdue Univ, W Lafayette, IN 47907 USA
来源
2003 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2003年
关键词
D O I
10.1109/VLSIC.2003.1221147
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This talk will examine CMOS technology at the scaling limit and the role that new, molecular devices may play in future electronics systems. Advanced simulation techniques that capture quantum effects and atomistic structure allow realistic projections of ultimate CMOS. The same techniques allow us to explore unconventional devices such as carbon nanotube FETs, two-terminal molecular devices, and spintronic devices. The role of such devices in future heterogeneous systems will be considered. The talk will conclude with some general thoughts on the important role of the VLSI design community for electronics beyond the gigascale.
引用
收藏
页码:5 / 8
页数:4
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