Influence of strain on growth mode and electro-optical properties of high-brightness InGaN-LEDs on SiC

被引：2

作者：

Baur, J ^{[1
]}

Strauss, U ^{[1
]}

Bruederl, G ^{[1
]}

Eisert, D ^{[1
]}

Oberschmid, R ^{[1
]}

Hahn, B ^{[1
]}

Lugauer, HJ ^{[1
]}

Bader, S ^{[1
]}

Zehnder, U ^{[1
]}

Fehrer, M ^{[1
]}

Härle, V ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH & Co OHG, Semicond Engn, D-93049 Regensburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期

关键词：

characterization; growth models; stresses; light emitting diodes;

D O I：

10.1016/S0022-0248(01)01286-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a detailed study, on the influence of buffer strain on the MOVPE crystal growth mode in the QW active layer of high-brightness InGaN LEDs on SiC substrate. While highly strained buffers are related to InGaN QWs with homogeneous In-distribution, low In-concentration and reduced quantum efficiency, buffers with reduced strain are shown to induce InGaN-QW growth with a dot-like In-distribution, locally high In-concentration and good quantum efficiency. Using an optimised buffer technology, we developed extremely bright InGaN QW-LEDs with a brightness of more than 7 mW (at 460 nm and 20 mA) in a 5 mm radial lamp, good wavelength stability, low forward voltage, high ESD-stability and low ageing. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：507 / 511

页数：5

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