EXCITON RECOMBINATION IN ZNSEXTE1/X/ZNTE QWS AND ZNSEXTE1-X EPILAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：7

作者：

NAUMOV, A ^{[1
]}

STANZL, H ^{[1
]}

WOLF, K ^{[1
]}

ROSENAUER, A ^{[1
]}

LANKES, S ^{[1
]}

GEBHARDT, W ^{[1
]}

机构：

[1] UNIV REGENSBURG,INST FESTKORPERPHYS,D-93040 REGENSBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90875-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present the optical characterization of MOVPE grown ZnSeTe1-x epilayers with 0<x<0.35 and ZnSexTe1-x single quantum wells (SQWs) with L(z) = 2.0-8.5 nm. The structures were investigated using photoreflectance and photoluminescence spectroscopy. Transmission electron microscope analysis was used to determine quantum well thickness. The studied ZnSe0.3Te0.7 SWQs show a bright emission band with a halfwidth approximately 10 meV in the spectral region of 100-250 meV below the band gap of the corresponding mixed crystal. We suggest a type Il bands alignment in ZnSexTe1-x/ZnTe single quantum wells.

引用

页码：595 / 600

页数：6

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