LUMINESCENCE DUE TO LATTICE-MISMATCH DEFECTS IN ZNTE LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：52

作者：

NAUMOV, A ^{[1
]}

WOLF, K ^{[1
]}

REISINGER, T ^{[1
]}

STANZL, H ^{[1
]}

GEBHARDT, W ^{[1
]}

机构：

[1] A F IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.353071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two sharp and intense emission bands with the maxima of 2.185 and 2.150 eV and a weak phonon coupling were investigated in the heteroepitaxial ZnTe layers. The study of the ZnTe layers grown on different substrates with thicknesses of 0.5-3.2 mum has shown that this luminescence is produced in the interface region that contains a high density of structural defects. The temperature dependence of these bands reveals the excitonic character of the recombination. We propose that the observed bands originate from the recombination of excitons localized at structural defects such as dislocations and associated defects.

引用

页码：2581 / 2583

页数：3

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