INVESTIGATION OF STRAINED ZNTE EPILAYERS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引:23
作者
BAUER, S [1 ]
ROSENAUER, A [1 ]
SKORSETZ, J [1 ]
KUHN, W [1 ]
WAGNER, HP [1 ]
ZWECK, J [1 ]
GEBHARDT, W [1 ]
机构
[1] UNIV REGENSBURG,INST ANGEW PHYS,W-8400 REGENSBURG,GERMANY
关键词
D O I
10.1016/0022-0248(92)90763-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Structural properties and strain relaxation at the ZnTe/GaAs (001) interface are investigated by high resolution electron microscopy (HREM). Images taken from ZnTe MOVPE-grown epilayers with a resolution of 0.2 nm show an array of misfit dislocations at the interface. Their analysis is facilitated by using a digital image processing method. The most common line defects at the ZnTe/GaAs interface are Lomer and 60-degrees dislocations. Also a small number of stacking faults, limited by partial dislocations, can be observed at the interface. The spacing between the misfit dislocations allows an estimate of the strain relaxation.
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页码:297 / 302
页数:6
相关论文
共 10 条
[1]  
BROWN PD, IN PRESS J CRYSTAL G
[2]   GROWTH AND CHARACTERIZATION OF ZNTE AND ZNTE-CDTE SUPERLATTICES ON GAAS SUBSTRATES [J].
CLIFTON, PA ;
MULLINS, JT ;
BROWN, PD ;
RUSSELL, GJ ;
BRINKMAN, AW ;
WOODS, J .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :726-731
[3]  
FEUILLET G, 1987, MICROSCOPY SEMICONDU
[4]   THE EFFECT OF FRICTIONAL STRESS ON THE CALCULATION OF CRITICAL THICKNESS IN EPITAXY [J].
FOX, BA ;
JESSER, WA .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2801-2808
[5]   INVESTIGATION OF STRAIN IN METALORGANIC VAPOR-PHASE EPITAXY GROWN ZNTE LAYERS BY OPTICAL METHODS [J].
LEIDERER, H ;
JAHN, G ;
SILBERBAUER, M ;
KUHN, W ;
WAGNER, HP ;
LIMMER, W ;
GEBHARDT, W .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :398-404
[6]   THE OBSERVATION OF INSITU AND EXSITU OXIDATION PROCESSES FOR ZNTE SURFACES BY HIGH-RESOLUTION ELECTRON-MICROSCOPY [J].
LU, P ;
SMITH, DJ .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 107 (02) :681-691
[7]   GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].
MAREE, PMJ ;
BARBOUR, JC ;
VANDERVEEN, JF ;
KAVANAGH, KL ;
BULLELIEUWMA, CWT ;
VIEGERS, MPA .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4413-4420
[8]  
Matthews J.W., 1979, DISLOCATIONS SOLIDS, V2, P463
[9]   TRANSMISSION ELECTRON-MICROSCOPY OF (001)ZNTE ON (001)GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
PETRUZZELLO, J ;
OLEGO, DJ ;
CHU, X ;
FAURIE, JP .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1783-1785
[10]  
WAGNER HP, IN PRESS J LUMINESCE