TRANSMISSION ELECTRON-MICROSCOPY OF (001)ZNTE ON (001)GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：28

作者：

PETRUZZELLO, J ^{[1
]}

OLEGO, DJ ^{[1
]}

CHU, X ^{[1
]}

FAURIE, JP ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1783 / 1785

页数：3

共 8 条

[1] TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF MISFIT DISLOCATIONS IN GAASP EPITAXIAL-FILMS [J].

AHEARN, JS ;

LAIRD, C .

JOURNAL OF MATERIALS SCIENCE, 1977, 12 (04) :699-707

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF CD1-XZNXTE, HG1-XCDXTE,HG1-XMNXTE, AND HG1-XZNXTEONGAAS(100) [J].

FAURIE, JP ;

RENO, J ;

SIVANANTHAN, S ;

SOU, IK ;

CHU, X ;

BOUKERCHE, M ;

WIJEWARNASURIYA, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :585-589

[3] GROWTH AND CHARACTERIZATION OF ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES [J].

KOBAYASHI, M ;

KIMURA, R ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :495-500

[4]

MATTHEWS JW, 1975, EPITAXIAL GROWTH B, P559

[5] COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD [J].

MITSUHASHI, H ;

MITSUISHI, I ;

MIZUTA, M ;

KUKIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L578-L580

[6]

OLEGO D, UNPUB

[7] TRANSMISSION ELECTRON-MICROSCOPY OF (001) CDTE ON (001) GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PETRUZZELLO, J ;

OLEGO, D ;

GHANDHI, SK ;

TASKAR, NR ;

BHAT, I .

APPLIED PHYSICS LETTERS, 1987, 50 (20) :1423-1425

[8]

Yao T., 1985, TECHNOLOGY PHYSICS M, P313

← 1 →