TRANSMISSION ELECTRON-MICROSCOPY OF (001) CDTE ON (001) GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：32

作者：

PETRUZZELLO, J ^{[1
]}

OLEGO, D ^{[1
]}

GHANDHI, SK ^{[1
]}

TASKAR, NR ^{[1
]}

BHAT, I ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 20期

关键词：

D O I：

10.1063/1.97842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1423 / 1425

页数：3

共 11 条

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[3]

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[4]

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[5] HIGH-RESOLUTION ELECTRON-MICROSCOPE STUDY OF EPITAXIAL CDTE-GAAS INTERFACES [J].

OTSUKA, N ;

KOLODZIEJSKI, LA ;

GUNSHOR, RL ;

DATTA, S ;

BICKNELL, RN ;

SCHETZINA, JF .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :860-862

[6] INTERFACE STRUCTURE IN HETEROEPITAXIAL CDTE ON GAAS(100) [J].

PONCE, FA ;

ANDERSON, GB ;

BALLINGALL, JM .

SURFACE SCIENCE, 1986, 168 (1-3) :564-570

[7]

RHODES RG, 1964, IMPERFECTIONS ACTIVE, P64

[8]

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[9]

1985, J VAC SCI TECHNOL A, V3, P1

[10]

1983, J VAC SCI TECHNOL A, V1, P3

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