NEW DEEP-LEVEL PHOTOLUMINESCENCE BANDS OF HOMOEPITAXIAL CDTE-FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

FUJII, S

TERADA, T

FUJITA, Y

IUCHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L1712 / L1714

页数：3

相关论文

共 9 条

[1] TEM STUDIES OF EPITAXIAL CDTE AND (HG, CD)TE GROWN BY MOVPE ON GAAS AND CDTE SUBSTRATES
BROWN, PD
HAILS, JE
RUSSELL, GJ
WOODS, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 511 - 515
[2] DEFECT STRUCTURE OF EPITAXIAL CDTE LAYERS GROWN ON (100) AND (111)B GAAS AND ON (111)B CDTE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BROWN, PD
HAILS, JE
RUSSELL, GJ
WOODS, J
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1144 - 1145
[3] NOVEL TYPE OF OPTICAL-TRANSITION OBSERVED IN MBE GROWN CDTE
DEAN, PJ
WILLIAMS, GM
BLACKMORE, G
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (11) : 2291 - 2300
[4] DEAN PJ, 1981, PHYS STATUS SOLIDI A, V81, P6895
[5] PHOTOLUMINESCENCE OF CDTE - A COMPARISON OF BULK AND EPITAXIAL MATERIAL
GILESTAYLOR, NC
BICKNELL, RN
BLANKS, DK
MYERS, TH
SCHETZINA, JF
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 76 - 82
[6] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
LEOPOLD, DJ
BALLINGALL, JM
WROGE, ML
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (21) : 1473 - 1474
[7] LUMB MD, 1978, LUMINESCENCE SPECTRO, P60
[8] X-RAY STUDY OF THE CRYSTALLINE-STRUCTURE OF CDTE LAYERS GROWN ON (001), (111)A, AND (111)B CDTE SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ORON, M
RAIZMAN, A
SHTRIKMAN, H
CINADER, G
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1059 - 1061
[9] TAGUCHI T, 1973, JPN J APPL PHYS, V12, P1558, DOI 10.1143/JJAP.12.1558