Infra-red emission characterization of polycrystalline diamond films

被引：7

作者：

Ayres, VM

McCormick, T

Alexander, WB

Vestyck, DJ

Butler, JE

Spiberg, P

机构：

[1] Michigan State Univ, Dept Elect Engn, E Lansing, MI 48824 USA

[2] Harris Semicond Inc, Analyt Serv, Palm Bay, FL 32905 USA

[3] MEMC Elect Mat Inc, St Peters, MO 63376 USA

[4] Geocenters Inc, Ft Washington, MD 20744 USA

[5] USN, Res Lab, Div Chem, Washington, DC 20375 USA

[6] ECR Corp, San Diego, CA 92121 USA

来源：

关键词：

infra-red; defect; photoluminescence; Raman spectroscopy;

D O I：

10.1016/S0925-9635(97)00320-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Infra-red emission has been used to characterize polycrystalline diamond films of differing qualities, produced by de arcjet chemical vapor deposition. Intrinsic and defect-induced bands were observed from samples heated in a low emissivity cell using Fourier Transform Infra-red spectroscopy (FTIR). In addition, the IR emission and absorption spectra of polished IIa and Ib single crystal diamonds were measured to compare the intrinsic and nitrogen-induced absorption and emission bands. Emission features observed included the intrinsic two phonon bands, defect-induced one phonon bands (from symmetry breaking), nitrogen-related bands, and CH stretching bands. Complementary information on the quality and defects in the samples was provided using photoluminescence and Raman spectroscopies. (C) 1998 Elsevier Science S.A.

引用

页码：789 / 793

页数：5

共 8 条

[1] PHONON NODES OF DIAMOND (100) SURFACES FROM AB-INITIO CALCULATIONS [J].