Study of the electron field emission and microstructure correlation in nanocrystalline carbon thin films

被引:37
作者
Gupta, S
Weiss, BL
Weiner, BR
Morell, G
机构
[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[2] Univ Puerto Rico, Dept Chem, San Juan, PR 00931 USA
[3] Univ Puerto Rico, Dept Phys Sci, San Juan, PR 00931 USA
关键词
D O I
10.1063/1.1367873
中图分类号
O59 [应用物理学];
学科分类号
摘要
Nanocrystalline carbon thin films were deposited by hot-filament chemical vapor deposition using a 2% concentration of methane in hydrogen. The films were deposited on molybdenum substrates under various substrate biasing conditions. A positive bias produced a continuous flow of electrons from the filament onto the substrate, while a negative bias caused the substrate to be bombarded with positive ions. Films were also grown under no bias, for comparison. Differences in the electron field emission properties (turn-on fields and emitted currents) of these films were characterized. Correspondingly, microstructural differences were also studied, as characterized with atomic force microscopy and Raman spectroscopy. Films grown under electron bombardment showed lower turn-on fields, smoother surfaces, and smaller grains than those grown under ion bombardment or no bias. A correlation between the enhanced emission properties and the nanocrystalline carbon material produced by the low-energy particle bombardment was found through the parameters obtained using spectroscopic ellipsometry modeling. The results confirm the significant role of defects on the electron field emission mechanism. (C) 2001 American Institute of Physics.
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页码:5671 / 5675
页数:5
相关论文
共 28 条
[1]  
Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173
[2]  
BRODIE I, 1992, ADV ELECTRON EL PHYS, V83, P1
[3]  
Castellano J.A., 1992, HDB DISPLAY TECHNOLO
[4]   Modification on the electron field emission properties of diamond films: The effect of bias voltage applied in situ [J].
Chen, YH ;
Hu, CT ;
Lin, IN .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3890-3894
[5]  
Coll BF, 1998, MATER RES SOC SYMP P, V498, P185
[6]   TEM OBSERVATIONS OF DIAMOND FILMS PREPARED BY MICROWAVE PLASMA CVD [J].
ETO, H ;
TAMOU, Y ;
OHSAWA, Y ;
KIKUCHI, N .
DIAMOND AND RELATED MATERIALS, 1992, 1 (2-4) :373-379
[7]   OPTICAL DISPERSION-RELATIONS FOR AMORPHOUS-SEMICONDUCTORS AND AMORPHOUS DIELECTRICS [J].
FOROUHI, AR ;
BLOOMER, I .
PHYSICAL REVIEW B, 1986, 34 (10) :7018-7026
[8]   DIAMOND COLD-CATHODE [J].
GEIS, MW ;
EFREMOW, NN ;
WOODHOUSE, JD ;
MCALEESE, MD ;
MARCHYWKA, M ;
SOCKER, DG ;
HOCHEDEZ, JF .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :456-459
[9]   Field emission properties of nanocrystalline chemically vapor deposited-diamond films [J].
Gröning, O ;
Küttel, OM ;
Gröning, P ;
Schlapbach, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :1970-1986
[10]   QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].
HIMPSEL, FJ ;
KNAPP, JA ;
VANVECHTEN, JA ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1979, 20 (02) :624-627