Prediction of a shape-induced enhancement in the hole relaxation in nanocrystals

被引:42
作者
Califano, M [1 ]
Bester, G [1 ]
Zunger, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1021/nl0343304
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We present a pseudopotential calculation of the single particle and excitonic spectrum of CdSe nanocrystals. We find that in the excitonic manifold derived from the ground state electron and the first 60 hole states there are two energy gaps much larger than the typical LO phonon energy in bulk CdSe. Such gaps can effectively slow the hole relaxation process, as recently found experimentally. We show that they originate from two gaps in the hole spectrum and are therefore a single-particle effect, as opposed to an excitonic effect. The calculated width of the gaps increases with decreasing dot size, in agreement with the experimental trend of the energy loss rate that decreases with dot size. We find that the presence of the gaps is not limited to CdSe nanocrystals with the wurtzite crystal structure but is also found in spherical InAs zinc blende dots. Comparison with our results for quantum rods and cylinders of different aspect ratios, and with a single-band effective mass model, shows the origin of the gaps to be interband coupling in spherical NCs. The gaps disappear above an aspect ratio of about 3-4, thus predicting a fast hole relaxation for elongated nanostructures.
引用
收藏
页码:1197 / 1202
页数:6
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共 20 条
  • [1] INTRINSIC MECHANISM FOR THE POOR LUMINESCENCE PROPERTIES OF QUANTUM-BOX SYSTEMS
    BENISTY, H
    SOTOMAYORTORRES, CM
    WEISBUCH, C
    [J]. PHYSICAL REVIEW B, 1991, 44 (19) : 10945 - 10948
  • [2] PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES
    BOCKELMANN, U
    BASTARD, G
    [J]. PHYSICAL REVIEW B, 1990, 42 (14): : 8947 - 8951
  • [3] EFROS AL, 1995, SOLID STATE COMMUN, V93, P281, DOI 10.1016/0038-1098(94)00780-2
  • [4] Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states
    Efros, AL
    Rosen, M
    Kuno, M
    Nirmal, M
    Norris, DJ
    Bawendi, M
    [J]. PHYSICAL REVIEW B, 1996, 54 (07): : 4843 - 4856
  • [5] ABSORPTION AND INTENSITY-DEPENDENT PHOTOLUMINESCENCE MEASUREMENTS ON CDSE QUANTUM DOTS - ASSIGNMENT OF THE 1ST ELECTRONIC-TRANSITIONS
    EKIMOV, AI
    HACHE, F
    SCHANNEKLEIN, MC
    RICARD, D
    FLYTZANIS, C
    KUDRYAVTSEV, IA
    YAZEVA, TV
    RODINA, AV
    EFROS, AL
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1993, 10 (01) : 100 - 107
  • [6] Many-body pseudopotential theory of excitons in InP and CdSe quantum dots
    Franceschetti, A
    Fu, H
    Wang, LW
    Zunger, A
    [J]. PHYSICAL REVIEW B, 1999, 60 (03): : 1819 - 1829
  • [7] InP quantum dots: Electronic structure, surface effects, and the redshifted emission
    Fu, HX
    Zunger, A
    [J]. PHYSICAL REVIEW B, 1997, 56 (03): : 1496 - 1508
  • [8] Applicability of the k•p method to the electronic structure of quantum dots
    Fu, HX
    Wang, LW
    Zunger, A
    [J]. PHYSICAL REVIEW B, 1998, 57 (16): : 9971 - 9987
  • [9] Intraband relaxation in CdSe quantum dots
    Guyot-Sionnest, P
    Shim, M
    Matranga, C
    Hines, M
    [J]. PHYSICAL REVIEW B, 1999, 60 (04) : R2181 - R2184
  • [10] ROLE OF ELASTIC EXCITON-DEFECT SCATTERING IN RESONANT RAMAN AND RESONANT BRILLOUIN-SCATTERING IN CDSE
    HERMANN, C
    YU, PY
    [J]. PHYSICAL REVIEW B, 1980, 21 (08) : 3675 - 3688