Magnetic tunneling junctions with permalloy electrodes: a study of barrier, thermal annealing, and interlayer coupling

被引：7

作者：

Liu, XY ^{[1
]}

Ren, C

Ritchie, L

Schrag, BD

Xiao, G

Li, LF

机构：

[1] Brown Univ, Dept Phys, 182 Hope St, Providence, RI 02912 USA

[2] Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100864, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2003年 / 267卷 / 01期

基金：

美国国家科学基金会;

关键词：

interlayer coupling; magnetic tunneling junctions (MT[!text type='Js']Js[!/text]); magnetoresistance; thermal annealing;

D O I：

10.1016/S0304-8853(03)00298-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic properties of Ni81Fe19/Al2O3/Ni81Fe19 tunneling junctions are studied for different Al thicknesses and plasma oxidation times. A maximal magnetoresistance of 34% is obtained with Al thickness of 20 Angstrom. Magnetometry reveals large exchange bias fields (similar to4000e) over a wide range of barrier thicknesses, indicating junctions of high quality. Transport measurements conducted on junctions before and after thermal annealing show a dramatic improvement in barrier quality after annealing. Interlayer coupling fields have been measured as a function of barrier thickness for different oxidation times. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：133 / 138

页数：6

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