Interfacial behavior of alkyltrichlorosilane monolayers on silicon: Control of flat-band potential and surface state distribution using chain length variation

被引:23
作者
Kulkarni, Sneha A. [1 ]
Vijayamohanan, Kunjukrishna P. [1 ]
机构
[1] Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India
关键词
D O I
10.1016/j.susc.2007.05.003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The passivating behavior of octadecyltrichlorosilane (C-18), dodecyltrichlorosilane (C-12) and octyltrichlorosilane (C-8) self-assembled monolayers (SAMs) on Si(1 0 0), has been quantitatively compared using cyclic voltammetry and impedance analysis in the presence and absence of an external redox probes like ferrocene. In all these cases, Fourier transform infra, red (FTIR) spectroscopy and contact angle measurements give clear evidence for the presence of a closely packed, oriented and hydrophobic monolayer. The electron transfer behavior of ferrocene is found to be drastically affected by the presence of monolayer and the reasons for such significant variation are analyzed in terms of the change in resistance, dielectric thickness and coverage of the monolayer. Double layer capacitance is found to decrease systematically with increasing the chain length of the monolayer suggesting a smooth variation in the "plane of closest approach" with the thickness of the monolayer, despite the presence of a space charge layer on Si electrode. Comparison of the electrochemical properties of the SAM-derivatized Si electrodes with that of a bare Si electrode using impedance analysis exhibits a four order of magnitude decrease in the apparent rate constant of ferrocene oxidation due to the barrier provided by various monolayers (C-8,C-12,C-8). A peak in the capacitance-potential curve presumably, due to surface states, is suppressed with an increase in the chain length of the monolayer. In addition, a positive shift in flat-band potential (E-1b) with the monolayer chain length, suggests the covalent coupling of the silane monolayer. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:2983 / 2993
页数:11
相关论文
共 65 条
[1]  
ADAMSON AW, 1997, PHYS CHEM SURFACES, P36
[2]   CHARGE-TRANSFER AT PARTIALLY BLOCKED SURFACES - A MODEL FOR THE CASE OF MICROSCOPIC ACTIVE AND INACTIVE SITES [J].
AMATORE, C ;
SAVEANT, JM ;
TESSIER, D .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 147 (1-2) :39-51
[3]   Impedance analysis of self-assembled naphthalene disulfide monolayer on gold using external redox probes [J].
Bandyopadhyay, K ;
Vijayamohanan, K ;
Shekhawat, GS ;
Gupta, RP .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1998, 447 (1-2) :11-16
[4]   Electrochemical properties of (111)-oriented n-Si surfaces derivatized with covalently-attached alkyl chains [J].
Bansal, A ;
Lewis, NS .
JOURNAL OF PHYSICAL CHEMISTRY B, 1998, 102 (07) :1067-1070
[5]   Alkylation of Si surfaces using a two-step halogenation Grignard route [J].
Bansal, A ;
Li, XL ;
Lauermann, I ;
Lewis, NS ;
Yi, SI ;
Weinberg, WH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1996, 118 (30) :7225-7226
[6]   Surface characterization and electrochemical properties of alkyl, fluorinated alkyl, and alkoxy monolayers on silicon [J].
Barrelet, CJ ;
Robinson, DB ;
Cheng, J ;
Hunt, TP ;
Quate, CF ;
Chidsey, CED .
LANGMUIR, 2001, 17 (11) :3460-3465
[7]   Contact resistance in metal-molecule-metal junctions based on aliphatic SAMs: Effects of surface linker and metal work function [J].
Beebe, JM ;
Engelkes, VB ;
Miller, LL ;
Frisbie, CD .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (38) :11268-11269
[8]   Silicon surface states and subsurface hydrogen [J].
Belaidi, A ;
Chazalviel, JN ;
Ozanam, F ;
Gorochov, O ;
Chari, A ;
Fotouhi, B ;
Etman, M .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1998, 444 (01) :55-60
[9]   EVIDENCE OF A TRANSITION-TEMPERATURE FOR THE OPTIMUM DEPOSITION OF GRAFTED MONOLAYER COATINGS [J].
BRZOSKA, JB ;
SHAHIDZADEH, N ;
RONDELEZ, F .
NATURE, 1992, 360 (6406) :719-721
[10]  
CAILAPAKUL O, 1995, LANGMUIR, V11, P1329