Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy

被引：16

作者：

Ivanov, SV ^{[1
]}

Solov'ev, VA ^{[1
]}

Moiseev, KD ^{[1
]}

Sedova, IV ^{[1
]}

Terent'ev, YV ^{[1
]}

Toropov, AA ^{[1
]}

Meltzer, BY ^{[1
]}

Mikhailova, MP ^{[1
]}

Yakovlev, YP ^{[1
]}

Kop'ev, PS ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.1352696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III-V part) and CdMgSe/CdSe (as a II-VI part), has been proposed as a basic element of a midinfrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy and has exhibited an intense long-wavelength electroluminescence at 3.12 mum (300 K). A less than 10 times reduction of electroluminescence intensity from 77 to 300 K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as DeltaE(C) = 1.28 eV and DeltaE(V) similar to 1.6 eV. The type of band lineups at a coherent InAs/Cd1-xMgxSe interface is discussed for 0 less than or equal tox less than or equal to0.15. (C) 2001 American Institute of Physics.

引用

页码：1655 / 1657

页数：3

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