Noncontact measurement of transport properties of long-bulk-carrier-lifetime Si wafers using photothermal radiometry

被引：36

作者：

Salnick, A

Mandelis, A

Jean, C

机构：

[1] Dept. of Mech. and Indust. Eng., Photothermal Optoelectron. D., University of Toronto, Toronto, Ont. M5S 3G8

[2] MITEL S.C.C., Bromont

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期

关键词：

D O I：

10.1063/1.117726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical model for the photothermal radiometric signal from semiconductors of finite thickness has been used to measure simultaneously the carrier diffusion coefficient, carrier lifetime, and surface recombination velocity of FZ Si wafers with very long bulk carrier lifetimes (industrial microelectronic grade). The results showed the importance of accounting for the finite thickness of the substrate in obtaining accurate measurements of these parameters using the entirely noncontacting radiometric approach. (C) 1995 American Institute of Physics.

引用

页码：2522 / 2524

页数：3

共 7 条

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