NON-DESTRUCTIVE, NONCONTACT CHARACTERIZATION OF SILICON USING PHOTOTHERMAL RADIOMETRY

被引：12

作者：

HILLER, TM ^{[1
]}

SOMEKH, MG ^{[1
]}

SHEARD, SJ ^{[1
]}

NEWCOMBE, DR ^{[1
]}

机构：

[1] UNIV LONDON UNIV COLL,DEPT ELECT & ELECTR ENGN,LONDON WC1E 7JE,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 02期

关键词：

D O I：

10.1016/0921-5107(90)90040-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Non-destructive characterization of silicon at some depth within a wafer is a difficult task, but is necessary for any realistic on-line process monitoring for large semiconductor devices. The techniques that appear most promising at the moment rely on the detection of optically injected carriers by either a Schottky contact or the attenuation of a probe laser by the carriers. Photothermal methods have also recently been used for semiconductor evaluation, and this paper presents a development of the photothermal technique that enables non-contact, non-destructive evaluation of carrier lifetime in a silicon sample. © 1990.

引用

页码：107 / 111

页数：5

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