Burning match oxidation process of silicon nanowires screened at the atomic scale

被引：57

作者：

De Padova, Paola ^{[1
]}

Leandri, Christel ^{[2
]}

Vizzini, Sebastien ^{[2
]}

Quaresima, Claudio ^{[1
]}

Perfetti, Paolo ^{[1
]}

Olivieri, Bruno ^{[3
]}

Oughaddou, Hamid ^{[4
]}

Aufray, Bernard ^{[2
]}

Le Lay, Guy ^{[2
]}

机构：

[1] CNR ISM, I-00133 Rome, Italy

[2] CINaM CNRS, F-13288 Marseille 9, France

[3] CNR ISAC, I-00133 Rome, Italy

[4] DSM IRAMIS SPCSI, Lab SIMA, Gif Sur Yvette, France

来源：

NANO LETTERS | 2008年 / 8卷 / 08期

关键词：

D O I：

10.1021/nl800994s

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon oxide nanowires hold great promise for functional nanoscale electronics. Here, we investigate the oxidation of straight, massively parallel, metallic Si nanowires. We show that the oxidation process starts at the Si NW terminations and develops like a burning match. While the spectroscopic signatures on the virgin, metallic part, are unaltered we identify four new oxidation states on the oxidized part, which show a gap opening, thus revealing the formation of a transverse internal nanojunction.

引用

收藏

页码：2299 / 2304

页数：6

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