Growth of straight, atomically perfect, highly metallic silicon nanowires with chiral asymmetry

被引：102

作者：

De Padova, Paola ^{[1
]}

Quaresima, Claudio ^{[1
]}

Perfetti, Paolo ^{[1
]}

Olivieri, Bruno ^{[2
]}

Leandri, Christel ^{[3
]}

Aufray, Bernard ^{[3
]}

Vizzini, Sebastien ^{[3
]}

Le Lay, Guy ^{[3
]}

机构：

[1] CNR ISM, I-00133 Rome, Italy

[2] CNR ISAC, I-00133 Rome, Italy

[3] CRMCN CNRS, F-13288 Marseille 9, France

来源：

NANO LETTERS | 2008年 / 8卷 / 01期

关键词：

D O I：

10.1021/nl072591y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that self-assemble in large left-handed and right-handed magnetic-like domains.

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页码：271 / 275

页数：5

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