From Si nanowires to porous silicon: The role of excitonic effects

被引:141
作者
Bruno, Mauro
Palummo, Maurizia
Marini, Andrea
Del Sole, Rodolfo
Ossicini, Stefano
机构
[1] Univ Roma Tor Vergata, CNR, INFM, ETSF,Inst Stat Mech & Complex,CNISM, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[3] Univ Modena & Reggio Emilia, CNR, INFMS, I-42100 Reggio Emilia, Italy
[4] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42100 Reggio Emilia, Italy
关键词
D O I
10.1103/PhysRevLett.98.036807
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that the electronic and optical properties of silicon nanowires, with different size and orientation, are dominated by important many-body effects. The electronic and excitonic gaps, calculated within first principles, agree with the available experimental data. Huge excitonic effects, which depend strongly on wire orientation and size, characterize the optical spectra. Modeling porous silicon as a collection of interacting nanowires, we find an absorption spectrum which is in very good agreement with experimental measurements only when the electron-hole interaction is included.
引用
收藏
页数:4
相关论文
共 34 条
[1]   The GW method [J].
Aryasetiawan, F ;
Gunnarsson, O .
REPORTS ON PROGRESS IN PHYSICS, 1998, 61 (03) :237-312
[2]  
BENSAHEL D, 1993, OPTICAL PROPERTIES L
[3]   Porous silicon: a quantum sponge structure for silicon based optoelectronics [J].
Bisi, O ;
Ossicini, S ;
Pavesi, L .
SURFACE SCIENCE REPORTS, 2000, 38 (1-3) :1-126
[4]   Comment on "Quantum confinement and electronic properties of silicon nanowires" [J].
Bruneval, F ;
Botti, S ;
Reining, L .
PHYSICAL REVIEW LETTERS, 2005, 94 (21)
[5]   Excitons in germanium nanowires: Quantum confinement, orientation, and anisotropy effects within a first-principles approach [J].
Bruno, M ;
Palummo, M ;
Marini, A ;
Del Sole, R ;
Olevano, V ;
Kholod, AN ;
Ossicini, S .
PHYSICAL REVIEW B, 2005, 72 (15)
[6]   OPTICAL-PROPERTIES OF POROUS SILICON - A 1ST-PRINCIPLES STUDY [J].
BUDA, F ;
KOHANOFF, J ;
PARRINELLO, M .
PHYSICAL REVIEW LETTERS, 1992, 69 (08) :1272-1275
[7]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[8]   Excitons in carbon nanotubes:: An ab initio symmetry-based approach -: art. no. 196401 [J].
Chang, E ;
Bussi, G ;
Ruini, A ;
Molinari, E .
PHYSICAL REVIEW LETTERS, 2004, 92 (19) :196401-1
[9]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[10]   ORIENTATION EFFECT IN ELECTRONIC-PROPERTIES OF SILICON WIRES [J].
FILONOV, AB ;
PETROV, GV ;
NOVIKOV, VA ;
BORISENKO, VE .
APPLIED PHYSICS LETTERS, 1995, 67 (08) :1090-1091