ORIENTATION EFFECT IN ELECTRONIC-PROPERTIES OF SILICON WIRES

被引：27

作者：

FILONOV, AB

PETROV, GV

NOVIKOV, VA

BORISENKO, VE

机构：

[1] Belarusian State University of Informatics and Radioelectronics, Minsk 220027

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 08期

关键词：

D O I：

10.1063/1.114458

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic properties of (100), (110), and (111) oriented H-terminated silicon quantum-size wires have been calculated within the self-consistent LCAO method. The quantum confinement induced direct band gap only appears in the (100) wires. Surface silicon d and p electrons are found to be responsible for the bottom of the conduction band while the top of the valence band are formed by p electrons of the core atoms. Possible reconstruction of the wire surface is discussed. (C) 1995 American Institute of Physics.

引用

页码：1090 / 1091

页数：2

共 13 条

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