Hole transport and carrier lifetime in InN epilayers

被引:40
作者
Chen, F [1 ]
Cartwright, AN
Lu, H
Schaff, WJ
机构
[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[2] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2133892
中图分类号
O59 [应用物理学];
学科分类号
摘要
Time-resolved transient grating spectroscopy has been conducted to measure the ambipolar diffusion coefficient and to derive the hole mobility and carrier lifetime in an InN epilayer simultaneously. The ambipolar diffusion coefficient D-a=2.0 cm(2)/s, hole mobility mu(h)=39 cm(2)/V s, and carrier lifetime tau(R)=5.4 ns at 300 K near the InN surface were determined by monitoring the transient grating kinetics at various grating periods. In addition, we observed a decrease of hole mobility and carrier lifetime at the internal epilayer/buffer interface in comparison with those at the free surface, suggesting a faster carrier capture rate to the defect states and a more efficient defect and impurity scattering mechanism. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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