AMBIPOLAR DIFFUSION-COEFFICIENT IN MOLECULAR-BEAM-EPITAXY-GROWN SILICON LAYERS

被引：8

作者：

GRIVICKAS, V ^{[1
]}

NETIKSIS, V ^{[1
]}

NOREIKA, D ^{[1
]}

PETRAUSKAS, M ^{[1
]}

WILLANDER, M ^{[1
]}

HASAN, MA ^{[1
]}

NI, WX ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PEDIAT ONCOL,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.346788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The noncontact transient grating technique under constant electron-hole pumping to the density 4×1019cm-3was used to characterize the ambipolar diffusion coefficient Da in Si:Al, Si:In, and Si:Sb molecular-beam-epitaxy-grown layers. Da was found to be almost constant at a value of ≊8 cm2/s up to an equilibrium carrier density of 2×1019 cm-3in the layer and was independent of the doping type. At higher doping density, evidence for a sharp increase in Da was observed. For example, Da increased to a value of 20 cm2/s at a doping density of about 1020 cm-3. The Da behavior is in reasonable agreement with results of the high-density ambipolar diffusion theory of Young and van Driel and is incompatible with majority-carriers diffusion coefficients according to the formula Da = 2DnDp/(Dn + D p). An explanation for this behavior is given.

引用

页码：617 / 620

页数：4

共 22 条

[1]

DZIWIOR J, 1979, APPL PHYS LETT, V32, P170

[2]

Eichler H. J., 2013, LASER INDUCED DYNAMI

[3] LASER-INDUCED FREE-CARRIER AND TEMPERATURE GRATINGS IN SILICON [J].

EICHLER, HJ ;

MASSMANN, F ;

BISELLI, E ;

RICHTER, K ;

GLOTZ, M ;

KONETZKE, L ;

YANG, X .

PHYSICAL REVIEW B, 1987, 36 (06) :3247-3253

[4] ELECTRICAL-PROPERTIES OF SI(100) FILMS DOPED WITH LOW-ENERGY (LESS-THAN-OR-EQUAL-TO 150 EV) SB IONS DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

FONS, P ;

HIRASHITA, N ;

MARKERT, LC ;

KIM, YW ;

GREENE, JE ;

NI, WX ;

KNALL, J ;

HANSSON, GV ;

SUNDGREN, JE .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1732-1734

[5] LIGHT-INDUCED TRANSIENT GRATING DECAY IN SI AND SOME AIIBVI COMPOUNDS [J].

GAUBAS, E ;

JARASIUNAS, K ;

VAITKUS, J .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1982, 69 (01) :K87-K90

[6]

GRIVICKAS V, UNPUB

[7] CARRIER LIFETIME IN MBE GROWN SI-SB AND SI-IN LAYERS MEASURED BY THE TRANSIENT GRATING METHOD [J].

GRIVITSKAS, V ;

WILLANDER, M ;

NOREIKA, D ;

PETRAUSKAS, M ;

KNALL, J ;

NI, WX .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (11) :1116-1121

[8] INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF ALUMINUM COEVAPORATED DURING SI(100) MOLECULAR-BEAM EPITAXY [J].

HASAN, MA ;

SUNDGREN, JE ;

HANSSON, GV ;

MARKERT, LC ;

GREENE, JE .

THIN SOLID FILMS, 1990, 184 (1 -2 pt 2) :61-67

[9] INCORPORATION OF ACCELERATED LOW-ENERGY (50-500 EV) IN+ IONS IN SI(100) FILMS DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

HASAN, MA ;

KNALL, J ;

BARNETT, SA ;

SUNDGREN, JE ;

MARKERT, LC ;

ROCKETT, A ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) :172-179

[10] CARRIER DYNAMICS AT SURFACE AND INTERFACE IN HYDROGENATED AMORPHOUS-SILICON OBSERVED BY THE TRANSIENT GRATING METHOD [J].

KOMURO, S ;

AOYAGI, Y ;

SEGAWA, Y ;

NAMBA, S ;

MASUYAMA, A ;

OKAMOTO, H ;

HAMAKAWA, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :968-970

← 1 2 3 →