INCORPORATION OF ACCELERATED LOW-ENERGY (50-500 EV) IN+ IONS IN SI(100) FILMS DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引:49
作者
HASAN, MA
KNALL, J
BARNETT, SA
SUNDGREN, JE
MARKERT, LC
ROCKETT, A
GREENE, JE
机构
[1] UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[3] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1063/1.342565
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:172 / 179
页数:8
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