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INCORPORATION OF ACCELERATED LOW-ENERGY (50-500 EV) IN+ IONS IN SI(100) FILMS DURING GROWTH BY MOLECULAR-BEAM EPITAXY
被引:49
作者
:
HASAN, MA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
HASAN, MA
KNALL, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
KNALL, J
BARNETT, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
BARNETT, SA
SUNDGREN, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
SUNDGREN, JE
MARKERT, LC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
MARKERT, LC
ROCKETT, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
ROCKETT, A
GREENE, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
GREENE, JE
机构
:
[1]
UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801
[2]
UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[3]
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源
:
JOURNAL OF APPLIED PHYSICS
|
1989年
/ 65卷
/ 01期
关键词
:
D O I
:
10.1063/1.342565
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:172 / 179
页数:8
相关论文
共 29 条
[11]
SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS
JORKE, H
论文数:
0
引用数:
0
h-index:
0
JORKE, H
HERZOG, HJ
论文数:
0
引用数:
0
h-index:
0
HERZOG, HJ
KIBBEL, H
论文数:
0
引用数:
0
h-index:
0
KIBBEL, H
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(05)
: 511
-
513
[12]
Kim Y, UNPUB
[13]
INDIUM INCORPORATION DURING THE GROWTH OF (100) SI BY MOLECULAR-BEAM EPITAXY - SURFACE SEGREGATION AND RECONSTRUCTION
KNALL, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
KNALL, J
SUNDGREN, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
SUNDGREN, JE
GREENE, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
GREENE, JE
ROCKETT, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
ROCKETT, A
BARNETT, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
BARNETT, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(06)
: 689
-
691
[14]
KNALL J, 1988, SILICON MOL BEAM EPI, V2, P470
[15]
KNALL J, UNPUB
[16]
KNALL J, IN PRESS SURF SCI
[17]
THERMAL RELEASE OF INERT GASES FORM A (100) TUNGSTEN SURFACE
KORNELSEN, EV
论文数:
0
引用数:
0
h-index:
0
KORNELSEN, EV
SINHA, MK
论文数:
0
引用数:
0
h-index:
0
SINHA, MK
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(10)
: 4546
-
+
[18]
KUBIAK RRA, 1985, APPL PHYS LETT, V45, P565
[19]
EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
METZGER, RA
论文数:
0
引用数:
0
h-index:
0
METZGER, RA
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(04)
: 931
-
940
[20]
NOEL JP, IN PRESS J APPL PHYS
←
1
2
3
→
共 29 条
[11]
SECONDARY IMPLANTATION OF SB INTO SI MOLECULAR-BEAM EPITAXY LAYERS
JORKE, H
论文数:
0
引用数:
0
h-index:
0
JORKE, H
HERZOG, HJ
论文数:
0
引用数:
0
h-index:
0
HERZOG, HJ
KIBBEL, H
论文数:
0
引用数:
0
h-index:
0
KIBBEL, H
[J].
APPLIED PHYSICS LETTERS,
1985,
47
(05)
: 511
-
513
[12]
Kim Y, UNPUB
[13]
INDIUM INCORPORATION DURING THE GROWTH OF (100) SI BY MOLECULAR-BEAM EPITAXY - SURFACE SEGREGATION AND RECONSTRUCTION
KNALL, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
KNALL, J
SUNDGREN, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
SUNDGREN, JE
GREENE, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
GREENE, JE
ROCKETT, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
ROCKETT, A
BARNETT, SA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT MET,URBANA,IL 61801
BARNETT, SA
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(06)
: 689
-
691
[14]
KNALL J, 1988, SILICON MOL BEAM EPI, V2, P470
[15]
KNALL J, UNPUB
[16]
KNALL J, IN PRESS SURF SCI
[17]
THERMAL RELEASE OF INERT GASES FORM A (100) TUNGSTEN SURFACE
KORNELSEN, EV
论文数:
0
引用数:
0
h-index:
0
KORNELSEN, EV
SINHA, MK
论文数:
0
引用数:
0
h-index:
0
SINHA, MK
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(10)
: 4546
-
+
[18]
KUBIAK RRA, 1985, APPL PHYS LETT, V45, P565
[19]
EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
METZGER, RA
论文数:
0
引用数:
0
h-index:
0
METZGER, RA
ALLEN, FG
论文数:
0
引用数:
0
h-index:
0
ALLEN, FG
[J].
JOURNAL OF APPLIED PHYSICS,
1984,
55
(04)
: 931
-
940
[20]
NOEL JP, IN PRESS J APPL PHYS
←
1
2
3
→