SILICON MOLECULAR-BEAM EPITAXY - USE OF A MICROION SOURCE FOR DOPING BY LOW-ENERGY IMPLANTATION

被引：6

作者：

DECARVALHO, RP ^{[1
]}

DJEBBAR, N ^{[1
]}

GUTIERREZ, J ^{[1
]}

VAPAILLE, A ^{[1
]}

机构：

[1] UNIV PARIS 11, INST ELECTR FONDAMENTALE, F-91405 ORSAY, FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期

关键词：

D O I：

10.1116/1.583941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：515 / 517

页数：3

相关论文

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