Optical and surface analysis of DC-reactive sputtered AlN films

被引:82
作者
Mahmood, A
Machorro, R
Muhl, S
Heiras, J
Castillón, FF
Farías, MH
Andrade, E
机构
[1] Univ Nacl Autonoma Mexico, Ctr Ciencias Mat Condensada, Ensenada 22800, Baja California, Mexico
[2] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico
[3] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico
关键词
aluminium nitride; sputtering; film; ellipsometry; oxidation;
D O I
10.1016/S0925-9635(03)00076-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A set of aluminium nitride (AlN), thin films were prepared by DC-reactive magnetron sputtering. The deposition parameters, such as substrate temperature, sputtering gas composition and plasma current were varied. Spectroscopic ellipsometry, XPS, RBS, XRD. SEM. AFM and FrIR techniques were utilized to study the relationship between film properties and preparation conditions. We observed that the optical and surface properties have a strong dependence on the deposition rate. All prepared films present a composition close to AlN stoichiometry, even for nitrogen to argon gas concentrations below 1:2. The near surface of AlN films exposed to atmosphere was primarily composed of Al2O3 while the bulk was AlN with some minor contamination of oxygen and carbon. The thickness of the oxide layer was reduced when higher plasma current and lower nitrogen concentration were used. Deposits prepared at 400 degreesC presented the best refractive index and deposition rate, for both utilized plasma currents. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1315 / 1321
页数:7
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