EVAPORATED ALUMINUM NITRIDE ENCAPSULATING FILMS

被引：32

作者：

BENSALEM, R

ABID, A

SEALY, BJ

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(86)90382-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：141 / 153

页数：13

共 23 条

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[8] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
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[J]. THIN SOLID FILMS, 1977, 47 (03) : 327 - 333