AIN CAPPED ANNEALING OF SE AND SN IMPLANTED SEMI-INSULATING GAAS

被引：17

作者：

BENSALEM, R

BARRETT, NJ

SEALY, BJ

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 03期

关键词：

D O I：

10.1049/el:19830080

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：112 / 113

页数：2

共 9 条

[1] TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER [J].

CHAPMAN, RL ;

FAN, JCC ;

DONNELLY, JP ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :805-807

[2] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[3] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1969, 14 (12) :372-&

[4] SELENIUM IMPLANTATION IN GAAS [J].

GAMO, K ;

INADA, T ;

KREKELER, S ;

MAYER, JW ;

EISEN, FH ;

WELCH, BM .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :213-217

[5] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].

LIDOW, A ;

GIBBONS, JF ;

MAGEE, T .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :158-161

[6] AIN CAPPED ANNEALING OF SI IMPLANTED SEMI-INSULATING GAAS [J].

OKAMURA, S ;

NISHI, H ;

INADA, T ;

HASHIMOTO, H .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :689-690

[7]

SHAHID MA, 1983, UNPUB RAD EFF

[8]

SURRIDGE RK, 1977, I PHYS C SER A, V33, P161

[9]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

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