PROTECTION OF GASAS, GAALAS AND GAASP BY ALUMINUM NITRIDE DEPOSITED BY REACTIVE SPUTTERING

[1] Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802

[2] DAVIES DE, 1975, J ELECTROCHEM SOC, V122, P10

[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43

[4] TELLURIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 219 - 223

[5] IMPLANTATION OF SELENIUM INTO GA1-XALXAS [J]. ELECTRONICS LETTERS, 1977, 13 (12) : 338 - 339

[6] SELENIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 213 - 217

[7] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[8] HENRY L, 1976, VIDE, V183, P101

[9] MOGRAB CJ, 1975, J ELECTROCHEM SOC, V122, P6

[1] Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802

[2] DAVIES DE, 1975, J ELECTROCHEM SOC, V122, P10

[3] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43

[4] TELLURIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 219 - 223

[5] IMPLANTATION OF SELENIUM INTO GA1-XALXAS [J]. ELECTRONICS LETTERS, 1977, 13 (12) : 338 - 339

[6] SELENIUM IMPLANTATION IN GAAS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 213 - 217

[7] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[8] HENRY L, 1976, VIDE, V183, P101

[9] MOGRAB CJ, 1975, J ELECTROCHEM SOC, V122, P6