共 10 条
- [3] ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS1-XPX [J]. SOLID-STATE ELECTRONICS, 1976, 19 (11) : 961 - 964
- [5] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &
- [6] EISEN FH, 1975, ION IMPLANTATION SEM, P3
- [7] ELECTRICAL PROPERTIES OF PROTON-BOMBARDED GA1-XALXAS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (10) : 546 - 547
- [8] HENRY L, 1976, VIDE, V101, P101
- [9] GA(ASP) LIGHT-EMITTING DIODE FORMED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 4982 - 4987
- [10] JOHNSON WS, 1969, PROJECTED RANGE SEMI