GA(ASP) LIGHT-EMITTING DIODE FORMED BY ION-IMPLANTATION

被引：17

作者：

ITOH, T ^{[1
]}

OANA, Y ^{[1
]}

机构：

[1] WASEDA UNIV,SCH SCI & ENGN,TOKYO,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 11期

关键词：

D O I：

10.1063/1.1662074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4982 / 4987

页数：6

共 12 条

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