Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy

被引：162

作者：

Gruber, T ^{[1
]}

Kirchner, C

Kling, R

Reuss, F

Waag, A

Bertram, F

Forster, D

Christen, J

Schreck, M

机构：

[1] Univ Ulm, Abt Halbleiterphys, Ulm, Germany

[2] Univ Magdeburg, Abt Festkorpperphys, Magdeburg, Germany

[3] Univ Augsburg, Lehrstuhl Expt Phys 4, D-8900 Augsburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 16期

关键词：

D O I：

10.1063/1.1620674

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The development of ZnO-based semiconductor devices requires band gap engineering. Ternary Zn1-xCdxO allows reduction of the band gap relative to ZnO, which would be necessary for devices emitting visible light. We have analyzed the structural and optical properties of Zn1-xCdxO layers grown by metalorganic vapor-phase epitaxy. A narrowing of the fundamental band gap of up to 300 meV has been observed, while introducing a lattice mismatch of only 0.5% with respect to binary ZnO. Photoluminescence, high-resolution x-ray diffraction, and spatially resolved cathodoluminescence measurements revealed a lateral distribution of two different cadmium concentrations within the Zn1-xCdxO layers. (C) 2003 American Institute of Physics.

引用

页码：3290 / 3292

页数：3

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