Nature of the band gap in Zn1-xBexSe alloys

被引：49

作者：

Chauvet, C ^{[1
]}

Tournié, E ^{[1
]}

Faurie, JP ^{[1
]}

机构：

[1] CNRS, CRHEA, F-06560 Valbonne, France

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.61.5332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated by low-temperature photoluminescence and reflectivity spectroscopies a series of Zn1-xBexSe alloys with x up to 0.70. This allows us to locate precisely the direct-to-indirect band-gap crossover at x = 0.46+/-0.01. We demonstrate that above this composition the indirect band gap corresponds to a Gamma-->X transition. By extrapolation we determine the Gamma-->X band gap of BeSe at 3.75+/-0.1 eV. Finally, we find a bowing parameter b = 0.97 eV for the Gamma-->Gamma direct band gap in the whole composition range. For x less than or equal to 0.60, this band gap increases linearly with the Be content at a rate of 23 meV/% Be.

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页码：5332 / 5336

页数：5

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