Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy

被引：10

作者：

Ni, WX ^{[1
]}

Hansson, GV

Cardenas, J

Svensson, BG

机构：

[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden

[2] Royal Inst Technol, Dept Elect, S-16440 Kista, Sweden

来源：

THIN SOLID FILMS | 1998年 / 321卷

关键词：

dopant surface segregation; molecular beam epitaxy; lattice strain;

D O I：

10.1016/S0040-6090(98)00461-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dopant surface segregation during molecular beam epitaxy (MBE) growth is a serious problem for controlling the doping profiles. To understand the segregation mechanism is essential. In this study, we report the B segregation ratio values, determined using concentration transient analysis based on secondary ion mass spectrometry (SIMS) measurements, for Si and SiGe, respectively. For a comparison, segregation ratio calculations based on a simplified two-site exchange model were performed. It is found that the surface segregation effects of B and Ge during MBE Si growth are interconnected, where the lattice strain likely plays an important role. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：131 / 135

页数：5

共 12 条

[1] SURFACE SEGREGATION IN BINARY SOLID-SOLUTIONS - A THEORETICAL AND EXPERIMENTAL PERSPECTIVE [J].