BORON SURFACE SEGREGATION IN SILICON MOLECULAR-BEAM EPITAXY

被引：43

作者：

DEFRESART, E ^{[1
]}

WANG, KL ^{[1
]}

RHEE, SS ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES, DEPT ELECT ENGN, DEVICE RES LAB, LOS ANGELES, CA 90024 USA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.100122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：48 / 50

页数：3

共 9 条

[1] SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].

BARNETT, SA ;

GREENE, JE .

SURFACE SCIENCE, 1985, 151 (01) :67-90

[2] BORON-OXIDE INTERACTION WITH SILICON IN SILICON MOLECULAR-BEAM EPITAXY [J].

DEFRESART, E ;

RHEE, SS ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :847-849

[3]

ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

[4] SURFACE-COMPOSITION OF ALLOYS [J].

KELLEY, MJ ;

PONEC, V .

PROGRESS IN SURFACE SCIENCE, 1981, 11 (03) :139-244

[5] ENHANCED STICKING COEFFICIENTS AND IMPROVED PROFILE CONTROL USING BORON AND ANTIMONY AS COEVAPORATED DOPANTS IN SI-MBE [J].

KUBIAK, PAA ;

LEONG, WY ;

PARKER, EHC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :592-595

[6] BORON DOPING IN SI MOLECULAR-BEAM EPITAXY BY COEVAPORATION OF B2O3 OR DOPED SILICON [J].

OSTROM, RM ;

ALLEN, FG .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :221-226

[7]

OTA Y, 1983, THIN SOLID FILMS, V106, P3, DOI 10.1016/0040-6090(83)90180-3

[8] SURFACE-COMPOSITION OF BINARY-ALLOYS [J].

SACHTLER, WMH ;

VANSANTEN, RA .

APPLICATIONS OF SURFACE SCIENCE, 1979, 3 (02) :121-144

[9] AN INVESTIGATION ON SURFACE CONDITIONS FOR SI MOLECULAR-BEAM EPITAXIAL (MBE) GROWTH [J].

XIE, YH ;

WANG, KL ;

KAO, YC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1035-1039

← 1 →