BORON-OXIDE INTERACTION WITH SILICON IN SILICON MOLECULAR-BEAM EPITAXY

被引：25

作者：

DEFRESART, E

RHEE, SS

WANG, KL

机构：

来源：

关键词：

D O I：

10.1063/1.97513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：847 / 849

页数：3

共 7 条

[1]

Aizaki H., 1985, 17TH C SOL STAT DEV, P297

[2]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[3]

HIROFUJI Y, 1985, 17TH C SOL STAT DEV, P297

[4]

ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

JOYNER, DJ ;

HERCULES, DM .

OSTROM, RM ;

ALLEN, FG .

[7] ETCHING OF SIO2-FILMS BY SI IN ULTRAHIGH-VACUUM [J].

TABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (03) :534-538