Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

被引：97

作者：

Sekine, K

Saito, Y

Hirayama, M

Ohmi, T

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Elect Engn, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 08期

关键词：

MOS capacitors; oxygen radical; silicon oxide;

D O I：

10.1109/16.936559

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O-2 mixed high-density microwave-excited plasma at 400 degreesC. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.

引用

收藏

页码：1550 / 1555

页数：6

相关论文

共 14 条

[1] LOW-RATE PLASMA OXIDATION OF SI IN A DILUTE OXYGEN HELIUM PLASMA FOR LOW-TEMPERATURE GATE QUALITY SI/SIO2 INTERFACES [J].

BRIGHT, AA ;

BATEY, J ;

TIERNEY, E .

APPLIED PHYSICS LETTERS, 1991, 58 (06) :619-621

[2] Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygen [J].

Fuyuki, T ;

Muranaka, S ;

Matsunami, H .

APPLIED SURFACE SCIENCE, 1997, 117 :123-126

[3]

HIRAYAMA M, 1998, ULTRA CLEAN TECHNOLO, V10, P30

[4] ULTRA-LOW-TEMPERATURE GROWTH OF HIGH-INTEGRITY GATE OXIDE-FILMS BY LOW-ENERGY ION-ASSISTED OXIDATION [J].

KAWAI, Y ;

KONISHI, N ;

WATANABE, J ;

OHMI, T .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2223-2225

[5] Growth of ultrathin SiO2 on Si by surface irradiation with an O2+Ar electron cyclotron resonance microwave plasma at low temperatures [J].

Liu, YC ;

Ho, LT ;

Bai, YB ;

Li, TJ ;

Furakawa, K ;

Gao, DW ;

Nakashima, H ;

Muroaka, K .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1911-1915

[6] Radical oxygen (O*) process for highly-reliable SiO2 with higher film-density and smoother SiO2/Si interface [J].

Nagamine, M ;

Itoh, H ;

Satake, H ;

Toriumi, A .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :593-596

[7] Influence of fluorine in BF2+ implantation on the formation of ultrashallow and low-leakage silicon p(+)n junctions by 450-500 degrees C annealing [J].

Nakada, A ;

Kanemoto, K ;

Oka, MM ;

Tamai, Y ;

Ohmi, T .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2560-2565

[8]

OHMI T, 1988, P 5 INT IEEE VLSI MU, P261

[9]

SAITO Y, 1999, 1999 INT C SOL STAT, P152

[10]

SAITO Y, 1999, JPN J APPL PHYS PT 1, V38, P418