ULTRA-LOW-TEMPERATURE GROWTH OF HIGH-INTEGRITY GATE OXIDE-FILMS BY LOW-ENERGY ION-ASSISTED OXIDATION

被引:64
作者
KAWAI, Y
KONISHI, N
WATANABE, J
OHMI, T
机构
[1] Department of Electronics Engineering, Faculty of Engineering, Tohoku University, Aramaki, Aoba-ku
关键词
D O I
10.1063/1.111680
中图分类号
O59 [应用物理学];
学科分类号
摘要
The gate oxide films have been grown at a temperature as low as 450-degrees-C by direct oxidation of silicon. Such a low-temperature oxidation has been realized by employing a precision controlled ion bombardment in an Ar/O2 Mixed plasma for the surface activation. Perfectly controlled Ar ions give the bombardment energy for the oxide film growth. Dielectric breakdown fields of 10 MV/cm are achieved. Integration in a total low-temperature device process has been demonstrated by fabricating self-aligned Al-gate metal-oxide-silicon field effect transistor (MOSFET) formed without any heat processing over 450-degrees-C. The precise control of the ion bombardment is quite essential for the low-temperature process.
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页码:2223 / 2225
页数:3
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