HIGH-QUALITY RF-SPUTTERED SILICON DIOXIDE LAYERS

被引：29

作者：

SCHREIBER, HU ^{[1
]}

FROSCHLE, E ^{[1
]}

机构：

[1] RHEIN WESTFAL TECH HSCH, INST HALBLEITER TECH, D-5100 AACHEN, GERMANY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 01期

关键词：

D O I：

10.1149/1.2132759

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：30 / 33

页数：4

相关论文

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