DEGRADATION OF OXIDE-FILMS DUE TO RADIATION EFFECTS IN EXPOSURE TO PLASMAS IN SPUTTER DEPOSITION AND BACKSPUTTERING

被引：35

作者：

MCCAUGHAN, DV ^{[1
]}

KUSHNER, RA ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1109/PROC.1974.9602

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1236 / 1241

页数：6

共 23 条

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[2] CARTER G, 1968, ION BOMBARDMENT SOLI, pCH8
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[4] DEPENDENCE OF MOS DEVICE RADIATION-SENSITIVITY ON OXIDE IMPURITIES
HUGHES, HL
BAXTER, RD
PHILLIPS, B
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 256 - 263
[5] IMPLANTATION OF ARGON INTO SIO2-FILMS DUE TO BACKSPUTTER CLEANING
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MEEK, RL
MCCAUGHAN, DV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (04) : 558 - 562
[6] KOCH FB, 1972, ECS C MIAMI FLA
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[8] KUSHNER RA, 1972, 7 NAT MICR C SAN FRA
[9] LIGENZA JR, 1970, SOLID STATE TECH DEC
[10] Loeb L.B., 1955, BASIC PROCESSES GASE