Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

被引:64
作者
Fan, XD
Takagahara, T
Cunningham, JE
Wang, HL [1 ]
机构
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[2] Univ Oregon, Oregon Ctr Opt, Eugene, OR 97403 USA
[3] NTT, Basic Res Labs, Atsugi, Kanagawa 24301, Japan
[4] AT&T Bell Labs, Lucent Technol, Holmdel, NJ 07733 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0038-1098(98)00461-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:857 / 861
页数:5
相关论文
共 22 条