Deposition and characterisation of bismuth oxide thin films

被引:79
作者
Fruth, V
Popa, M
Berger, D
Ramer, R
Gartner, A
Ciulei, A
Zaharescu, A
机构
[1] Inst Phys Chem, Bucharest 66021, Romania
[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Univ Bucharest, Bucharest 78126, Romania
[4] Univ New S Wales, Sydney, NSW 2052, Australia
关键词
sol-gel processes; X-ray methods; optical properties; Bi2O3; functional application;
D O I
10.1016/j.jeurceramsoc.2005.03.025
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Owing to their peculiar characteristics, bismuth oxides are used in various domains, such as microelectronics, sensor technology, optical coatings, transparent ceramic glass manufacturing, etc. Bismuth oxide system exhibit high oxide ionic conductivity and have been proposed as good electrolyte materials for application, such as solid oxide fuel cell (SOFC) and oxygen sensor. Antimony doped and undoped Bi2O3 films were deposited onto glass substrate from bismuth nitrate and antimony precursor solutions. As chelating agent polyethyleneglycol (PEG) was used and the above-mentioned precursor solutions were sufficiently viscous. In the present paper, the formation of different phases belonging to Bi-O system during thermal treatments of the Bi-based films is investigated by means of spectroscopic ellipsometry (SE), polarising microscope observation, X-ray diffractometry (XRD), and infrared spectrometry (IR). The thickness and the porosity of the films were evaluated. These preparation techniques, differing mainly in precursor materials and method of deposition, lead to different quality of the resulting films. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2171 / 2174
页数:4
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