MA(x)Te(2) phases (M=Nb, Ta; A=Si, Ge; 1/3<=x<=1/2): An electronic band structure calculation analysis

被引:10
作者
Boucher, F [1 ]
Zhukov, V [1 ]
Evain, M [1 ]
机构
[1] UNIV NANTES, UMR CNRS 10, IMN, CHIM SOLIDE LAB, F-44072 NANTES 03, FRANCE
关键词
D O I
10.1021/ic960564x
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The MA(x)Te(2) phase (M = Nb, Ta; A = Si, Ge; 1/3 less than or equal to x less than or equal to 1/2) band structures are reexamined by means of ab initio LMTO-TB band structure calculations for two representative compounds, NbGe1/2Te2 and NbGe1/3Te2. Despite the high covalency of the phases, the band structures can be analyzed in terms of M d-like blocks and Te and Ge s- and p-like states. Formal oxidation states can therefore be assigned and a general formulation established. The existence of the phases is shown to emanate from a strong bonding between the A elements and their four metal neighbors. The bonding not only assures the stability of the A element in its tellurium square-like environment but also provides the stability of the lone metals in their trigonal prismatic sites, which in turn allows the commensurate or incommensurate in-plane insertion of otherwise unstable trigonal prismatic MTe2 ribbons.
引用
收藏
页码:7649 / 7654
页数:6
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