Negative differential resistance due to single-electron switching

被引：67

作者：

Heij, CP ^{[1
]}

Dixon, DC ^{[1
]}

Hadley, P ^{[1
]}

Mooij, JE ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 07期

关键词：

D O I：

10.1063/1.123449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al(x)O(y) islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport. (C) 1999 American Institute of Physics. [S0003-6951(99)00607-5].

引用

页码：1042 / 1044

页数：3

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