FABRICATION OF MULTILAYER SINGLE-ELECTRON TUNNELING DEVICES

被引：52

作者：

VISSCHER, EH ^{[1
]}

VERBRUGH, SM ^{[1
]}

LINDEMAN, J ^{[1
]}

HADLEY, P ^{[1
]}

MOOIJ, JE ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL, DELFT INST MICROELECTR & SUBMICRON TECHNOL, 2600 GA DELFT, NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.113526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A reliable process has been developed for the fabrication of multilevel single-electron tunneling (SET) devices. Using this process, we have fabricated SET devices with Au-SiO-Al and Al-AlOx-SiO-Al overlap capacitors. The SET transistors exhibit voltage gain and, despite the complex device structure, have a low charge noise (7×10-5e/Hz). Moreover, the use of overlap capacitors in SET devices results in a reduction of cross capacitances down to 8%. © 1995 American Institute of Physics.

引用

页码：305 / 307

页数：3

共 18 条

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