In situ distance Tunneling Spectroscopy at Au-(111)/0.02 M HClO4 -: From Faradaic regime to quantized conductance channels

被引:26
作者
Hugelmann, M [1 ]
Schindler, W
机构
[1] Univ Karlsruhe TH, Inst Hochfrequenztech & Quantenelektron, D-76128 Karlsruhe, Germany
[2] Univ Karlsruhe TH, Ctr Funct Nanostruct, D-76128 Karlsruhe, Germany
关键词
D O I
10.1149/1.1644141
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
High-precision and fast in situ distance tunneling spectroscopy (DTS) at the Au(111)/0.02 M HClO4 interface over six decades of tip current allows a precise scaling of the distance between a scanning tunneling microscope tip and substrate surface. The jump-to-contact around tunneling resistances of 50-125 kOmega defines the zero point on the distance scale. A further tip approach results in the formation of quantized conductance channels showing integer values of the conductance quantum. In the tunneling regime, the mean variation of the tunneling current is a decade per 0.18 nm variation in the gap width. A detailed analysis of the current-distance curves reveals a modulation of the tunneling current with the gap width, which results from a modulation of the barrier height. The modulation period corresponds to the thickness of interfacial water layers. (C) 2004 The Electrochemical Society.
引用
收藏
页码:E97 / E101
页数:5
相关论文
共 33 条
[1]   Quantum properties of atomic-sized conductors [J].
Agraït, N ;
Yeyati, AL ;
van Ruitenbeek, JM .
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 2003, 377 (2-3) :81-279
[2]   CONDUCTANCE STEPS AND QUANTIZATION IN ATOMIC-SIZE CONTACTS [J].
AGRAIT, N ;
RODRIGO, JG ;
VIEIRA, S .
PHYSICAL REVIEW B, 1993, 47 (18) :12345-12348
[3]   ELECTROLYTIC SCANNING TUNNELING MICROSCOPY AND POINT CONTACT STUDIES AT ELECTROCHEMICALLY POLISHED AU(111) SUBSTRATES WITH AND WITHOUT PB ADSORBATES [J].
BINGGELI, M ;
CARNAL, D ;
NYFFENEGGER, R ;
SIEGENTHALER, H ;
CHRISTOPH, R ;
ROHRER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :1985-1992
[4]  
Budevski E., 1996, ELECTROCHEMICAL PHAS
[5]   Imaging of electron potential landscapes on Au(111) -: art. no. 176801 [J].
Bürgi, L ;
Brune, H ;
Kern, K .
PHYSICAL REVIEW LETTERS, 2002, 89 (17) :176801/1-176801/4
[6]   TRAVERSAL TIME FOR TUNNELING [J].
BUTTIKER, M ;
LANDAUER, R .
PHYSICAL REVIEW LETTERS, 1982, 49 (23) :1739-1742
[7]   Conductance quantization at room temperature in magnetic and nonmagnetic metallic nanowires [J].
CostaKramer, JL .
PHYSICAL REVIEW B, 1997, 55 (08) :R4875-R4878
[8]   Electrochemical fabrication of large arrays of metal nanoclusters [J].
Engelmann, GE ;
Ziegler, JC ;
Kolb, DM .
SURFACE SCIENCE, 1998, 401 (02) :L420-L424
[9]   TRANSITION FROM THE TUNNELING REGIME TO POINT CONTACT STUDIED USING SCANNING TUNNELING MICROSCOPY [J].
GIMZEWSKI, JK ;
MOLLER, R .
PHYSICAL REVIEW B, 1987, 36 (02) :1284-1287
[10]   Electron tunneling across an interfacial water layer inside an STM junction: tunneling distance, barrier height and water polarization effect [J].
Hahn, JR ;
Hong, YA ;
Kang, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S467-S472