Transferred-substrate HBTs with 254GHz fτ

被引:17
作者
Mensa, D [1 ]
Lee, Q [1 ]
Guthrie, J [1 ]
Jaganathan, S [1 ]
Rodwell, MJW [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
关键词
D O I
10.1049/el:19990398
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transferred-substrate HBTs with record current gain cutoff frequency f(tau) of 254GHz are reported.
引用
收藏
页码:605 / 606
页数:2
相关论文
共 6 条
  • [1] DEPENDENCE OF DC CURRENT GAIN AND FMAX OF ALINAS/GAINAS HBTS ON BASE SHEET RESISTANCE
    HAFIZI, M
    METZGER, RA
    STANCHINA, WE
    [J]. IEEE ELECTRON DEVICE LETTERS, 1993, 14 (07) : 323 - 325
  • [2] HAFIZI M, 1998, IEEE T ELECTRON DEV, V43, P1826
  • [3] EFFECTS OF A COMPOSITIONALLY-GRADED INXGA1-XAS BASE IN ABRUPT-EMITTER INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    KURISHIMA, K
    NAKAJIMA, H
    YAMAHATA, S
    KOBAYASHI, T
    MATSUOKA, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B): : 1221 - 1227
  • [4] A >400 GHz fmax transferred-substrate heterojunction bipolar transistor IC technology
    Lee, Q
    Agarwal, B
    Mensa, D
    Pullela, R
    Guthrie, J
    Samoska, L
    Rodwell, MJW
    [J]. IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) : 77 - 79
  • [5] Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency
    Mensa, D
    Lee, Q
    Guthrie, J
    Jaganathan, S
    Rodwell, MJW
    [J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 657 - 660
  • [6] InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers
    Sano, E
    Yoneyama, M
    Yamahata, S
    Matsuoka, Y
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) : 1826 - 1832