Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

被引：40

作者：

Goennenwein, S. T. B. ^{[1
]}

Althammer, M. ^{[1
]}

Bihler, C. ^{[2
]}

Brandlmaier, A. ^{[1
]}

Gepraegs, S. ^{[1
]}

Opel, M. ^{[1
]}

Schoch, W. ^{[3
]}

Limmer, W. ^{[3
]}

Gross, R. ^{[1
]}

Brandt, M. S. ^{[2
]}

机构：

[1] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Univ Ulm, Inst Halbleiterphys, D-89069 Ulm, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssr.200802011

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferro-magnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70 degrees. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：96 / 98

页数：3

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