Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation

被引：76

作者：

Wenisch, J. ^{[1
]}

Gould, C.

Ebel, L.

Storz, J.

Pappert, K.

Schmidt, M. J.

Kumpf, C.

Schmidt, G.

Brunner, K.

Molenkamp, L. W.

机构：

[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Phys Inst EP2, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.99.077201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.

引用

页数：4

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